Publications

Strong Light-Matter Interactions in Atomically Thin Films of Semiconducting Transition Metal Dichalcogenides

No abstract is provided for this article.

Electronic properties of graphene

Colossal enhancement of electrical and mechanical properties of graphene nanoscrolls

One of the most important characteristics of two-dimensional (2D) electrolytes [1] is their ability to reversibly transform into one-dimensional (1D) structures, such as nanoscrolls. However, when formed, these 1D structures are soft and unstable (because of the weak internal chemical bonds) and poorly electrically conducting (since chemical functionalization introduces a large degree of disorder in the 2D material basal plane). Using PeakForce™ quantitative nano-mechanics (PF-QNM™) mode in atomic force microscopy (AFM) and electrical transport measurements, we demonstrate that a one-step, catalyst-free, graphitization of 1D graphene nanoscrolls leads to an enhanced structural stability (an increase of 6 times in the Young's modulus) and a dramatic reduction of structural disorder (observed by a resulting 5 orders of magnitude reduction of the electrical resistance) These large changes in physical properties open up the doors for the use of 1D graphene nanoscrolls in the study of exotic materials in 1D as well as a plethora of possible industrial applications, such as hydrogen and energy storage, akin to carbon nanotubes but with a much bigger flexibility in terms of morphologies and functionalities.

Electric Field Effect in Atomically Thin Carbon Films

We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.

Spin splitting in graphene studied by means of tilted magnetic-field experiments

We have measured the spin splitting in single-layer and bilayer graphene by means of tilted magnetic-field experiments. By applying the Lifshitz-Kosevich formula for the spin-induced decrease of the Shubnikov-de Haas amplitudes with increasing tilt angle, we directly determine the product between the carrier cyclotron mass ${m}^{*}$ and the effective $g$ factor ${g}^{*}$ as a function of the charge-carrier concentration. By using the cyclotron mass for a single-layer and a bilayer graphene, we find an enhanced $g$ factor ${g}^{*}=2.7\ifmmode\pm\else\textpm\fi{}0.2$ for both systems.

Smart and Multifunctional Fiber‐Reinforced Composites of 2D Heterostructure‐Based Textiles

Smart and multifunctional fiber reinforced polymer (FRP) composites with energy storage, sensing, and heating capabilities have gained significant interest for automotive, civil, and aerospace applications. However, achieving smart and multifunctional capabilities in an FRP composite while maintaining desired mechanical properties remains challenging. Here, a novel approach for layer‐by‐layer (LBL) deposition of 2D material (graphene and molybdenum disulfide, MoS 2 )‐based heterostructure onto glass fiber fabric using a highly scalable manufacturing technique at a remarkable speed of ≈150 m min −1 is reported. This process enables the creation of smart textiles with integrated energy storage, sensing, and heating functionalities. This methodology combines gel‐based electrolyte with a vacuum resin infusion technique, resulting in an efficient and stable smart FRP composite with an areal capacitance of up to ≈182 µF cm − 2 at 10 mV s −1 . The composite exhibits exceptional cyclic stability, maintaining ≈90% capacitance after 1000 cycles. Moreover, the smart composite demonstrates joule heating, reaching from ≈24 to ≈27 °C within 120 s at 25 V. Additionally, the smart composite displays strain sensitivity by altering electrical resistance with longitudinal strain, enabling structural health monitoring. These findings highlight the potential of smart composites for multifunctional applications and provide an important step toward realizing their actual real‐world applications.

Unveiling the destabilization of sp3 and sp2 bonds in transition metal-modified borohydrides to improve reversible dehydrogenation and rehydrogenation

Borohydrides offer promise as potential carriers for hydrogen storage due to their high hydrogen concentration. However, the strong chemical bonding within borohydrides poses challenges for efficient hydrogen release during usage and restricts the re-hydrogenation process when attempting to regenerate the material. These high thermodynamic and kinetic barriers present obstacles in achieving reversible de-hydrogenation and re-hydrogenation of borohydrides, impeding their practical application in hydrogen storage systems. Employing density functional theory calculations, we conduct a comprehensive investigation into the influence of transition metals on both the BH4 cluster, a fundamental building block of borohydrides, and pure boron, which is formed as the end product following hydrogen release. Our research reveals correlations among the d-band center, work function, and surface energy of 3d and 4d transition metals. These correlations are directly linked to the weakening of bonding within the BH4 cluster when adsorbed on catalyst surfaces. On the other hand, we also explore how various intrinsic properties of transition metals influence the formation of boron vacancies and the hydrogen bonding process. By establishing a comprehensive correlation between the weakening of sp3 hybridization in the BH4 cluster and the sp2 hybridization in boron, we facilitate the identification and screening of optimal candidates capable of achieving reversible de-hydrogenation and re-hydrogenation in borohydrides.

Spatial design and control of graphene flake motion

The force between a sharp scanning probe tip and a surface can drive a graphene flake over crystalline substrates. The recent design of particular patterns of structural defects on a graphene surface allows us to propose an alternative approach for controlling the motion of a graphene flake over a graphene substrate. The thermally induced motion of a graphene flake is controlled by engineering topological defects in the substrate. Such defect regions lead to an inhomogeneous energy landscape and are energetically unfavorable for the motion of the flake, and will invert and scatter graphene flakes when they are moving toward the defect line. Engineering the distribution of these energy barriers results in a controllable trajectory for the thermal motion of the flake without using any external force. We predict superlubricity of the graphene flake for motion along and between particular defect lines. This Rapid Communication provides insights into the frictional forces of interfaces and opens a route to the engineering of the stochastic motion of a graphene flake over any crystalline substrate.

2D semiconductor optoelectronics

No abstract is provided for this article.

Coulomb Correlation Gap at Magnetic Tunneling between Graphene Layers

The strong suppression of equilibrium magnetic tunneling in a graphene/hBN/graphene heterostructure caused by the Coulomb correlation gap in the tunneling density of states has been found. Comparison has shown that the suppression of the equilibrium tunneling conductivity $${{G}_{0}}$$ in a high magnetic field with a decrease in the temperature and the dependence of the observed gap width Δ on the filling factor of Landau levels ν are qualitatively similar to the respective results of similar experiments in GaAs heterostructures and has confirmed our hypothesis concerning the nature of the effect. However, the determined gap width Δ is much larger than those measured in all previous works in semiconductor heterostructures probably because the cyclotron energy in graphene is much higher than that in GaAs in the region of low Landau levels.

Phase-Changing in Graphite Assisted by Interface Charge Injection

Among many phase-changing materials, graphite is probably the most studied and interesting: the rhombohedral (3R) and hexagonal (2H) phases exhibit dramatically different electronic properties. However, up to now the only way to promote 3R to 2H phase transition is through exposure to elevated temperatures (above 1000 °C); thus, it is not feasible for modern technology. In this work, we demonstrate that 3R to 2H phase transition can be promoted by changing the charged state of 3D graphite, which promotes the repulsion between the layers and significantly reduces the energy barrier between the 3R and 2H phases. In particular, we show that charge transfer from lithium nitride (α-Li3N) to graphite can lower the transition temperature down to 350 °C. The proposed interlayer slipping model potentially offers the control over topological states at the interfaces between different phases, making this system even more attractive for future electronic applications.

The valley Zeeman effect in inter- and intra-valley trions in monolayer WSe2

Monolayer transition metal dichalcogenides (TMDs) hold great promise for future information processing applications utilizing a combination of electron spin and valley pseudospin. This unique spin system has led to observation of the valley Zeeman effect in neutral and charged excitonic resonances under applied magnetic fields. However, reported values of the trion valley Zeeman splitting remain highly inconsistent across studies. Here, we utilize high quality hBN encapsulated monolayer WSe 2 to enable simultaneous measurement of both intervalley and intravalley trion photoluminescence. We find the valley Zeeman splitting of each trion state to be describable only by a combination of three distinct g-factors, one arising from the exciton-like valley Zeeman effect, the other two, trion specific, g-factors associated with recoil of the excess electron. This complex picture goes significantly beyond the valley Zeeman effect reported for neutral excitons, and eliminates the ambiguity surrounding the magneto-optical response of trions in tungsten based TMD monolayers.

High-Mobility Compensated Semimetals, Orbital Magnetization, and Umklapp Scattering in Bilayer Graphene Moiré Superlattices

Twist-controlled moiré superlattices (MSs) have emerged as a versatile platform for realizing artificial systems with complex electronic spectra. The combination of Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) can give rise to an interesting MS, which has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and the electronic ratchet effect. Yet, the understanding of the electronic properties of BLG/hBN MS has, at present, remained fairly limited. Here, we combine magneto-transport and low-energy sub-THz excitation to gain insights into the properties of this MS. We demonstrate that the alignment between BLG and hBN crystal lattices results in the emergence of compensated semimetals at some integer fillings of the moiré bands, separated by van Hove singularities where the Lifshitz transition occurs. A particularly pronounced semimetal develops when eight holes reside in the moiré unit cell, where coexisting high-mobility electron and hole systems feature strong magnetoresistance reaching 2350% already at B = 0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, indicating an orbital magnetization characterized by a strongly enhanced effective gv-factor of 340. Finally, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multifaceted analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in van der Waals materials and provides a comprehensive understanding of the BLG/hBN MS.

Tunable giant valley splitting in edge-free graphene quantum dots on boron nitride

Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene, the first atomically thin 2D material, offers two binary degrees: the electron spin and the valley degree of freedom. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started without control for single electrons. Here, we show that van-der Waals stacking of 2D materials offers a natural platform for valley control due to the relatively strong and spatially varying atomic interaction between adjacent layers. We use an edge-free quantum dot, induced by the tip of a scanning tunneling microscope into graphene on hBN. We demonstrate a valley splitting, which is tunable from -5 meV to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts controlled valley splitting of single electrons by more than an order of magnitude, which will probably enable robust spin qubits and valley qubits in graphene.

Electron transport in graphene

Times Cited: 14 Scientific Session of the Physical Sciences Division of the Russian-Academy-of-Sciences Jan 22-23, 2008 RAS, Lebedev Phys Inst, Moscow, RUSSIA Russian Acad Sci, Phys Sci Div

Two-Dimensional Crystals: Beyond Graphene

Human progress and development has always been marked by breakthroughs in the control of materials. Since pre-historic times, through the stone, bronze, and iron ages, humans have exploited their environment for materials that can be either used directly or can be modified for their benefit, to make their life more comfortable, productive, or to give them military advantage. One age replaces another when the material that is the basis for its sustainability runs its course and is replaced by another material which presents more qualities. Multi-tasking, speed, versatility, and flexibility are at the heart of modern technology. In recent years a new class of materials that can fulfill these needs have emerged: two-dimensional (2D) crystals. Graphene is probably the most famous example, but there are numerous other examples with amazing electronic and structural properties. In this paper we look into the possible routes for exploration of this new field that presents new venues in basic science as well as in applications.

Highly Tunable Carrier Tunneling in Vertical Graphene–WS₂–Graphene van der Waals Heterostructures

Owing to the fascinating properties, the emergence of two-dimensional (2D) materials brings various important applications of electronic and optoelectronic devices from field-effect transistors (FETs) to photodetectors. As a zero-band-gap material, graphene has excellent electric conductivity and ultrahigh carrier mobility, while the ON/OFF ratio of the graphene FET is severely low. Semiconducting 2D transition metal chalcogenides (TMDCs) exhibit an appropriate band gap, realizing FETs with high ON/OFF ratio and compensating for the disadvantages of graphene transistors. However, a Schottky barrier often forms at the interface between the TMDC and metallic contact, which limits the on-state current of the devices. Here, we lift the two limits of the 2D-FET by demonstrating highly tunable field-effect tunneling transistors based on vertical graphene-WS2-graphene van der Waals heterostructures. Our devices show a low off-state current below 1 pA and a high ON/OFF ratio exceeding 106 at room temperature. Moreover, the carrier transport polarity of the device can be effectively tuned from n-type under small bias voltage to bipolar under large bias by controlling the crossover from a direct tunneling region to the Fowler-Nordheim tunneling region. Further, we find that the effective barrier height can be controlled by an external gate voltage. The temperature dependence of carrier transport demonstrates that both tunneling and thermionic emission contribute to the operation current at elevated temperature, which significantly enhances the on-state current of the tunneling transistors.

Direct Visualization and Manipulation of Stacking Orders in Few-Layer Graphene by Dynamic Atomic Force Microscopy

Stacking order plays a central role in governing a wide range of properties in layered two-dimensional materials. In the case of few-layer graphene, there are two common stacking configurations: ABA and ABC stacking, which have been proven to exhibit dramatically different electronic properties. However, the controllable characterization and manipulation between them remain a great challenge. Here, we report that ABA- and ABC-stacked domains can be directly visualized in phase imaging by tapping-mode atomic force microscopy with much higher spatial resolution than conventional optical spectroscopy. The contrasting phase is caused by the different energy dissipation by the tip–sample interaction. We further demonstrate controllable manipulation on the ABA/ABC domain walls by means of propagating stress transverse waves generated by the tapping of tip. Our results offer a reliable strategy for direct imaging and precise control of the atomic structures in few-layer graphene, which can be extended to other two-dimensional materials.