Publications

Artificially stacking 2D materials (2DMs) into vdW heterostructures creates materials with properties not present in nature that offer great potential for various applications such as flexible electronics. Properties of such stacked structures are controlled largely by the interfacial interactions and the structural integrity of the 2DMs. In spite of their crucial roles, interfacial stress transfer and the failure mechanisms of the vdW heterostructures, particularly during deformation, have not been well addressed so far. In this work, the interfacial stress transfer and failure mechanisms of a MoS 2 /graphene vdW heterostructure are studied, through the strain distributions both laterally in individual 2DMs and vertically across different 2DMs revealed in‐situ. The fracture of the MoS 2 and the associated states of stress and strain are monitored experimentally. This enables various interfacial properties, such as the interfacial shear strength and interfacial fracture energy, to be estimated. Based only on the measured strength and interfacial properties of a single vdW heterostructure, a failure criterion is proposed to predict the failure mechanisms of similar vdW heterostructures with any lateral dimensions. This work provides an insight to the deformation micromechanics of vdW heterostructures that are of great value for their miniaturization and applications, especially in flexible electronics.

Here, we report a one‐spot, temperature‐controlled AC electropolymerization strategy for converting graphene oxide and aniline into a crystalline, processable reduced graphene oxide (rGO)/polyaniline (PANI) composite for wearable ionic transistor textiles. By tuning the electropolymerization temperature from 4°C to 55°C under a low‐frequency triangular AC waveform, followed by mild postreduction, conformal polycrystalline PANI nanodomains are grown directly on rGO sheets. Low‐temperature synthesis yields the highest structural ordering and the lowest fraction of protonated imine species, directly linking growth conditions to mixed ionic–electronic transport behavior. The resulting rGO/PANI composite functions as an electrolyte‐gated transistor with stable operation and amplified gate response. Furthermore, the composite can be stencil printed onto cotton textiles to realize ratiometric Na + /K + sensing at constant ionic strength, highlighting its potential for scalable, wearable ion‐sensing architectures.

No abstract is provided for this article.

Recent developments in the area of resonant dielectric nanostructures has created attractive opportunities for the concentrating and manipulating light at the nanoscale and the establishment of new exciting field of all-dielectric nanophotonics. Transition metal dichalcogenides (TMDCs) with nanopatterned surfaces are especially promising for these tasks. Still, the fabrication of these structures requires sophisticated lithographic processes, drastically complicating application prospects. To bridge this gap and broaden the application scope of TMDC nanomaterials, we report here femtosecond laser-ablative fabrication of water-dispersed spherical TMDC (MoS2 and WS2) nanoparticles (NPs) of variable size (5 - 250 nm). Such nanoparticles demonstrate exciting optical and electronic properties inherited from TMDC crystals, due to preserved crystalline structure, which offers a unique combination of pronounced excitonic response and high refractive index value, making possible a strong concentration of electromagnetic field in the nanoparticles. Furthermore, such nanoparticles offer additional tunability due to hybridization between the Mie and excitonic resonances. Such properties bring to life a number of nontrivial effects, including enhanced photoabsorption and photothermal conversion. As an illustration, we demonstrate that the nanoparticles exhibit a very strong photothermal response, much exceeding that of conventional dielectric nanoresonators based on Si. Being in a mobile colloidal state and exhibiting superior optical properties compared to other dielectric resonant structures, the synthesized TMDC nanoparticles offer opportunities for the development of next-generation nanophotonic and nanotheranostic platforms, including photothermal therapy and multimodal bioimaging.

The ultimate limit of control of light at the nanoscale is the atomic scale. By stacking multiple layers of graphene on hexagonal boron nitride (h-BN), heterostructures with unique nanophotonic properties can be constructed, where the distance between plasmonic materials can be controlled with atom-scale precision. Here we show how an atomically thick tunable quantum tunnelling device can be used as a building block for quantum plasmonics. The device consists of two layers of graphene separated by 1 nm (three monolayers) of h-BN, and a bias voltage between the layers generates an electron gas coupled to a hole gas. We show that, even though its total charge is zero, this system is capable of supporting propagating graphene plasmons.

Inkjet-printed wearable electronic textiles (e-textiles) are considered to be very promising due to excellent processing and environmental benefits offered by digital fabrication technique. Inkjet-printing of conductive metallic inks such as silver (Ag) nanoparticles (NPs) are well-established and that of graphene-based inks is of great interest due to multi-functional properties of graphene-based materials. However, poor ink stability at higher graphene concentration and the cost associated with the higher Ag loading in metal inks have limited their wider use. Moreover, graphene-based e-textiles reported so far are mainly based on graphene derivatives such as graphene oxide (GO) or reduced graphene oxide (rGO), which suffers from poor electrical conductivity. Here we report inkjet printing of highly conductive and cost-effective graphene/Ag composite inks for wearable e-textiles applications. The composite inks were formulated, characterised and inkjet-printed onto PEL paper first and then sintered at 150 C for 1 hr. The sheet resistance of the printed patterns is found to be in the range of ~0.08 - 4.74 ohm/sq depending on the number of print layers and the graphene/Ag ratio in the formulation. The optimised composite ink was then successfully printed onto surface pre-treated (by inkjet printing) cotton fabrics in order to produce all-inkjet-printed highly conductive and cost-effective electronic textiles.

No abstract is provided for this article.

We have investigated thermal conductivity of graphene laminate films deposited on polyethylene terephthalate substrates. Two types of graphene laminate were studied, as deposited and compressed, in order to determine the physical parameters affecting the heat conduction the most. The measurements were performed using the optothermal Raman technique and a set of suspended samples with the graphene laminate thickness from 9 to 44 μm. The thermal conductivity of graphene laminate was found to be in the range from 40 to 90 W/mK at room temperature. It was found unexpectedly that the average size and the alignment of graphene flakes are more important parameters defining the heat conduction than the mass density of the graphene laminate. The thermal conductivity scales up linearly with the average graphene flake size in both uncompressed and compressed laminates. The compressed laminates have higher thermal conductivity for the same average flake size owing to better flake alignment. Coating plastic materials with thin graphene laminate films that have up to 600× higher thermal conductivity than plastics may have important practical implications.

Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution with the MoS2 thickness. Here, we identify specific vibrational and binding energy fingerprints of such strong interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge-transfer in monolayer MoS2. Near-field tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS2-Au interaction at the nanoscale, reflecting the spatial non-conformity between the two materials. Far-field micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the strong MoS2-Au interaction and provide guidance for strain and charge doping engineering of MoS2.

We have obtained for the first time atomic resolution STM images of free-standing graphene, and have found UHV high temperature annealing conditions to controllably achieve atomically clean surfaces. This is an important premise for fundamental studies of the interaction of pristine graphene with foreign atom species, in particular metals.

Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near van Hove singularities (VHS), though these are usually difficult to access in conventional materials. Here we show that moiré band engineering unlocks these singularities for THz optoelectronics. Using 2D moiré structures as a model system, we observe strong enhancement of the THz photothermoelectric response in monolayer and bilayer graphene superlattices when the Fermi level is tuned to band singularities. Applying a relatively small magnetic field further boosts the response through the THz-driven Nernst effect, a transverse thermoelectric current driven by the THz-induced temperature gradient. Our results establish moiré superlattices as a versatile platform for THz thermoelectricity and highlight engineered band structures as a route to high-performance THz optoelectronic devices.