Publications

To date, TFET results have been unsatisfying. The best reported subthreshold swings have been measured at a current density of around a nA/um and get significantly worse as the current increases. In order to achieve a better performance, there are fundamental design issues that need to be engineered. We can understand these issues by analyzing the three types of devices shown in Fig 1. The voltage required to operate a TFET can be given by: V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> = V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SS</sub> × Log(I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> )+ V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OV</sub> . V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SS</sub> is the subthreshold swing and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OV</sub> is the overdrive voltage needed to achieve the desired on-current after threshold. V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OV</sub> will be determined by the device geometry as shown in Fig 2 [1]. Introducing quantum confinement in the direction of tunneling increases the conductance by 1-2 orders of magnitude at low voltage. V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SS</sub> is given by the following model [2]: SS = 1/ η <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">el</sub> × (1/S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Barrier</sub> + η <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">conf</sub> /S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DOS</sub> ) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> (1) η <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">el</sub> is the electrostatic gate efficiency. η <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">conf</sub> is the quantum confinement efficiency and comes from energy level shifts that occur when the quantum well shape changes with bias. S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Barrier</sub> represents the steepness in mV/decade that comes from changing the thickness of the tunneling barrier. S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DOS</sub> is the steepness of the joint density of states (DOS) and represents the rate at which the joint DOS fall off as the band edges are misaligned.

Abstract Es werden einfache, zuverlässige Hochtemperatur‐Konzentrationszellen mit und ohne Flüssigkeitsübergang beschrieben.

We implemented a localization method which partially solves the problems of placement and assembly. The idea was to localize objects precisely (1 mil) so that uncertainty was negligible and dead reckoned positions were sufficient. The method was g eared towards industry by using reliable accurate, robust, inexpensive, sensors; light beam sensors have already been used in manufacturing environments. This technique involved passing objects through a set of coplanar beams and recording the robot's position when a light beam was broken or a beam reconnected. The algorithm localized and identified objects with the assumption that they were rigidly held. The advantages of this approach were: the feasibility and precision of the sensors, constant time identification using precomputed hash tables, and worst-case linear time identification algorithm. The disadvantages were: it cannot distinguish objects with equivalent convex-hulls, and does not work on "thin" objects. The performance and limitations of the actual beam sensors affected the design of the apparatus

Exciting new results have increasingly utilized objective and validated instruments to measure the circadian system in experimental studies. Since 2011, treatment research has still predominantly utilized self-report measures as outcome variables. However, research in the treatment domain for sleep/circadian disturbances comorbid with psychiatric illness has advanced the field in its work to broaden the validation of existing sleep treatments to additional patient populations with comorbid sleep/circadian disruptions and address how to increase access to and affordability of treatment for sleep and circadian dysfunction for patients with psychiatric disorders, and how to combine psychosocial treatments with psychopharmacology to optimize treatment outcomes.

This exposition shows that the potassium ion-channels and the sodium ion-channels that are distributed over the entire length of the axons of our neurons are in fact locally-active memristors. In particular, they exhibit all of the fingerprints of memristors, including the characteristic pinched hysteresis Lissajous figures in the voltage-current plane, whose loop areas shrink as the frequency of the periodic excitation signal increases. Moreover, the pinched hysteresis loops for the potassium ion-channel memristor, and the sodium ion-channel memristor, from the Hodgkin-Huxley axon circuit model are unique for each periodic excitation signal. An in-depth circuit-theoretic analysis and characterizations of these two classic biological memristors are presented via their small-signal memristive equivalent circuits, their frequency response, and their Nyquist plots. Just as the Hodgkin-Huxley circuit model has stood the test of time, its constituent potassium ion-channel and sodium ion-channel memristors are destined to be classic examples of locally-active memristors in future textbooks on circuit theory and bio-physics.