In recent years, ab initio molecular dynamics (MD) techniques have made a profound impact on the investigation of the structural, electronic and dynamic properties of liquid and amorphous materials. In this paper the authors' approach is described, which is based on a plane-wave basis set and an exact calculation of the electronic groundstate at each MD time step. The description of the electron-ion interaction by optimized ultrasoft pseudopotentials allows transition metals and first-row elements to be treated efficiently. The method has been applied to several systems, including liquid transition metals, amorphous semiconductors and simple metals, with great success. Here it is demonstrated that the technique is powerful enough to allow the investigation of dynamic properties of 1-Li and of the metal-non-metal transition in expanded Hg.
A model for the straight antiphase domain boundary of the ultrathin aluminum oxide film on the NiAl(110) substrate is derived from scanning tunneling microscopy measurements and density-functional theory calculations. Although the local bonding environment of the perfect film is maintained, the structure is oxygen deficient and possesses a favorable adsorption site. The domain boundary exhibits a downwards band bending and three characteristic unoccupied electronic states, in excellent agreement with scanning tunneling spectroscopy measurements.
Using low energy electron diffraction (LEED), density functional theory (DFT) and scanning tunneling microscopy (STM), we have re-analyzed the Pdð 100 Þ-ð ffiffiffi
The present ab initio study shows that in ${\mathrm{BaBiO}}_{3}$, ${\mathrm{Bi}}^{3+}$ sites can trap two holes from the valence band to form ${\mathrm{Bi}}^{5+}$ cations. The trapping is accompanied by large local lattice distortions; therefore the composite particle consisting of the electronic hole and the local lattice phonon field forms a polaron. Our study clearly shows that even $sp$ elements can trap carriers at lattice sites, if local lattice relaxations are sufficiently large to screen the localized hole. The derived model describes all relevant experimental results, and settles the issue of why hole-doped ${\mathrm{BaBiO}}_{3}$ remains semiconducting upon moderate hole doping.
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In recent years, ab initio molecular dynamics (MD) techniques have made a profound impact on the investigation of the structure of the electronic and dynamic properties of liquid and amorphous materials. In this paper, recent developments in this field are reviewed and it is shown that the exact calculation of the electronic groundstate at each MD timestep is feasible using modern iterative matrix diagonalization algorithms. Together with the use of ultrasoft pseudopotentials, ab initio MD simulations can be extended to open-shell transition metals with a high density of states at the Fermi-level. The technique is applied to a number of interesting cases: (a) liquid simple metals (Li, Na, Al, Ge), (b) liquid transition metals (Cu, V), and (c) the transition from a liquid metal to an amorphous semiconductor by the rapid quenching of Ge.
First principles simulations based on density functional theory have been used to determine absorption energies and pathways to dissociation of oxygen at finite temperature on the Cu (110) surface. Our results, which are in accord with recent experimental studies, suggest that adsorption kinetics play an important role in determining the mechanism of dissociation. Energy minimisation studies confirm that the HL site within the fourfold hollow is energetically most favourable for molecular adsorption where the O2 is peroxo like. Studies using the NEB method show that asymmetric rather than symmetric dissociation is preferred at this site and that the energy barrier for dissociation is virtually zero along the [001] direction and 120meV for the [11̄0] direction. We have identified the [11̄0] orientation at this site as a possible precursor state but only at very low temperatures. Ab initio dynamic simulations were used to examine dissociation on a substrate initially at 300K for collisions normal to the surface with a kinetic energy of either 50 or 500meV. Particularly for the lower impact energy molecules carry out complex motions once at the surface and significant steering is observed. In some cases molecules are observed to navigate several atomic distances across the surface before arriving at a fourfold hollow and adopting a favourable orientation prior to dissociation. On the time scale of the simulations (up to 5ps) some molecules were observed to become trapped on short-bridge sites with the [11̄0] orientation; in this case the electronic structure is superoxo like.