504 publications from this institution
A new O induced structure on Rh(111) displaying a (2 sqaureroot[3] x 2sqaureroot[3])R30 degrees periodicity with an oxygen coverage of 2/3 has been studied by high resolution core level spectroscopy, scanning tunneling microscopy, and density functional theory. Although O favors fcc hollow sites in all other known phases, it occupies both fcc and hcp sites in this structure, which cannot be explained by pairwise adsorbate repulsion only. Both the (2sqaureroot[3] x 2sqaureroot[3])R30 degrees and (2 x 2)-3O structures also exemplify that density-of-states contrast can lead to oxygen adatoms appearing as protrusions in scanning tunneling microscopy images.
We present a detailed study of the lattice dynamics and of the phase stability of cubic zincblende (c-BN) and hexagonal (h-BN) boron nitrides. The phonon-dispersion relations at different densities are calculated using a first-principles force-constant method. The calculated eigenfrequencies and phonon Gr\"uneisen parameters are in good agreement with experimental findings. From the electronic and vibrational energies as a function of volume we calculate the phase $(p,T)$ diagram of boron nitride in a quasiharmonic approximation. At low temperature c-BN is the stable modification; the c-BN/h-BN coexistence line intersects the temperature axis at 1440 K. In experiments this temperature lies between 1200 and 1800 K. Anharmonic corrections improve the agreement between the calculation and experiment for high pressure and temperature.
Determination of the morphology and electronic properties of single-layer nanosize MoS2 particles is of considerable interest for a better understanding of the active phase of hydrotreating catalysts. We propose an original approach, based on density functional calculations applied to various types of MoS2 clusters containing up to 200 atoms, to evaluate accurately the surface energies of the Mo-edge and S-edge terminated surfaces. The results are expressed as a function of the chemical potential of sulfur, which is in turn controlled by the temperature and the ratio of partial pressures of H2S and H2. Gibbs–Curie–Wulff equilibrium morphologies reveal that a high chemical potential of sulfur leads to triangular-shaped particles terminated by the Mo-edge surface, giving an interpretation of the observations made recently by scanning tunneling microscopy (STM). Simulations of the STM images for the most stable clusters reveal a qualitatively good agreement with experiments. Moreover, our approach predicts that varying the potential of sulfur modifies the local Mo-edge structure and the shape of the nanoparticles. Finally, the thermodynamic diagram for a MoS2 particle with a realistic size shows that the creation of one sulfur vacancy at the corner and on the edge is possible under HDS working conditions.
Using correlated wave function based methods, the modeling of promising new materials is elevated to a new level. For the first time, a realistic phonon dispersion relation is predicted for the infinite linear carbon chain.
The determination of the local structure of cobalt- or nickel-promoted MoS2-based hydrodesulfurization catalysts is of interest for understanding the mechanism leading to an increased activity brought by cobalt or nickel, the so-called synergetic effect. For that reason, we carried out ab initio calculations using density functional theory under the generalized gradient approximation for periodic systems. The edge substitution model emerges as the most stable structure and provides an excellent agreement with local structures experimentally determined on real catalysts by in situ extended X-ray absorption fine structure. We studied the adsorption of sulfur on the active edge surface of the promoted MoS2 catalyst and determined the equilibrium coverage under sulfiding conditions. It is demonstrated that the incorporation of promoter atoms has a strong influence on the sulfur–metal bond energy at the surface and in particular leads to a reduction of the equilibrium S coverage of the active metal sites. A comparative study on the effects of Co, Ni, and Cu atoms as promoters was performed. Detailed results on the surface electronic structure of promoted MoS2 are presented.
We present ab initio quantum-mechanical molecular-dynamics simulations of the liquid-metal--amorphous-semiconductor transition in Ge. Our simulations are based on (a) finite-temperature density-functional theory of the one-electron states, (b) exact energy minimization and hence calculation of the exact Hellmann-Feynman forces after each molecular-dynamics step using preconditioned conjugate-gradient techniques, (c) accurate nonlocal pseudopotentials, and (d) Nos\'e dynamics for generating a canonical ensemble. This method gives perfect control of the adiabaticity of the electron-ion ensemble and allows us to perform simulations over more than 30 ps. The computer-generated ensemble describes the structural, dynamic, and electronic properties of liquid and amorphous Ge in very good agreement with experiment. The simulation allows us to study in detail the changes in the structure-property relationship through the metal-semiconductor transition. We report a detailed analysis of the local structural properties and their changes induced by an annealing process. The geometrical, bonding, and spectral properties of defects in the disordered tetrahedral network are investigated and compared with experiment.
No abstract is provided for this article.
We present most recent developments to calculate the electronic states of semiconductors and insulators without taking into account experimental parameters. They are based on the solution of the quasiparticle equation starting with a reasonable zeroth order approximation for the electronic states and the GW approximation for the exchange–correlation self‐energy. Due to inclusion of screened exchange effects from the very beginning, self‐consistency can be easily reached. The advantages with respect to a starting point based on single‐particle eigenfunctions and eigenvalues of the ground‐state density functional theory (DFT) are clearly shown for band gaps, positions of semicore d‐bands, and densities of states. The progress is demonstrated for compounds containing first‐row elements such as metal oxides and nitrides whose gaps are much too small or even negative within the conventional DFT. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
No abstract is provided for this article.
No abstract is provided for this article.
Self-consistent $GW$ calculations, maintaining only the quasiparticle part of the Green's function $G$, are reported for a wide class of materials, including small gap semiconductors and large gap insulators. We show that the inclusion of the attractive electron-hole interaction via an effective nonlocal exchange correlation kernel is required to obtain accurate band gaps in the framework of self-consistent $GW$ calculations. If these are accounted for via vertex corrections in $W$, the band gaps are found to be within a few percent of the experimental values.