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Colloidal metal nanowire based transparent conductors are excellent candidates to replace indium-tin-oxide (ITO) owing to their outstanding balance between transparency and conductivity, flexibility, and solution-processability. Copper stands out as a promising material candidate due to its high intrinsic conductivity and earth abundance. Here, we report a new synthetic approach, using tris(trimethylsilyl)silane as a mild reducing reagent, for synthesizing high-quality, ultrathin, and monodispersed copper nanowires, with an average diameter of 17.5 nm and a mean length of 17 μm. A study of the growth mechanism using high-resolution transmission electron microscopy reveals that the copper nanowires adopt a five-fold twinned structure and evolve from decahedral nanoseeds. Fabricated transparent conducting films exhibit excellent transparency and conductivity. An additional advantage of our nanowire transparent conductors is highlighted through reduced optical haze factors (forward light scattering) due to the small nanowire diameter.
The extended cusp condition asserts that h(u)-${\mathit{a}}_{0}$dh(u)/du\ensuremath{\ge}0, where ${\mathit{a}}_{0}$ is the Bohr radius, u is the interelectronic spacing, and h(u) is the angle-averaged pair density in the ground state. We prove that this inequality is obeyed by Hooke's atom for any value of the spring constant. However, we also show that this condition is violated by the uniform electron gas of high density. We explain the qualitative difference between these two systems by subtracting a long-range contribution from h(u), leaving a short-range contribution which is amenable to a local density approximation. Thus the extended cusp condition is not a universal property of the ground state of inhomogeneous electronic systems.