797 publications from this institution
The serendipitously discovered solution-liquid-solid (SLS) mechanism has been refined into a nearly general synthetic method for semiconductor nanowires. Purposeful control of diameters and diameter distributions is achieved. The synthesis proceeds by a solution-based catalyzed-growth mechanism in which nanometer-scale metallic droplets catalyze the decomposition of metallo-organic precursors and crystalline nanowire growth. Related growth methods proceeding by the analogous vapor-liquid-solid (VLS) and supercritical fluid-liquid-solid (SFLS) mechanisms are known, and the relative attributes of the methods are compared. In short, the VLS method is most general and appears to afford nanowires of the best crystalline quality. The SLS method appears to be advantageous for producing the smallest nanowire diameters and for variation and control of surface ligation. The SFLS method may represent an ideal compromise. Recent results for SLS growth are summarized.
The fundamental energy gap of a periodic solid distinguishes insulators from metals and characterizes low-energy single-electron excitations. However, the gap in the band structure of the exact multiplicative Kohn-Sham (KS) potential substantially underestimates the fundamental gap, a major limitation of KS density-functional theory. Here, we give a simple proof of a theorem: In generalized KS theory (GKS), the band gap of an extended system equals the fundamental gap for the approximate functional if the GKS potential operator is continuous and the density change is delocalized when an electron or hole is added. Our theorem explains how GKS band gaps from metageneralized gradient approximations (meta-GGAs) and hybrid functionals can be more realistic than those from GGAs or even from the exact KS potential. The theorem also follows from earlier work. The band edges in the GKS one-electron spectrum are also related to measurable energies. A linear chain of hydrogen molecules, solid aluminum arsenide, and solid argon provide numerical illustrations.
Solid, liquid and alloyed phases of gallium play a role in a variety of important technological applications. While many of the gallium phases involved in these applications are metallic, some have been proposed or are known to contain covalently bound Ga dimers. Thus, understanding the nature of bonding in Ga is crucial to the development of Ga-based materials. The solid phase of gallium at ambient conditions, <i>α</i>-Ga, is metallic and composed of molecular dimers, and can serve as a testing ground for studying gallium bonding with electronic structure calculations. We use density functional theory-based molecular dynamics simulations in conjunction with maximally localised Wannier functions to examine the nature of chemical bonding in <i>α</i>-Ga. We propose a geometric criterion for defining various bonding environments, which enables the quantification of covalent and weak bonds in solid gallium. We additionally connect the bonding structure of <i>α</i>-Ga to its phonon density of states and discuss similarities and differences with diatomic halogen crystals.