Planar defects are the most popular and most important defects in nanobelts.In some cases,the presence of planar defects is essential for stabilizing the surfaces that exhibit higher energies and leading the fastest anisotropic growth of the nanobelts along a specific direction.Planar defects can be twins/bicrystals,stacking faults and/or interstitial stacking layer introduced by impurity atoms.In this paper,we review the planar defects observed in ZnO nanobelts by transmission electron microscopy.Two types of twin/bicrystal structures with twining planes as(0113) and(2112) have been identified.The observed basal-plane stacking faults can be classified into type I_1 and I_2.In large sized ZnO nanobelts,the I_1 basal-plane stacking fault can fold from basal plane to(2110) plane to form the prismatic-plane stacking fault.By doping indium ions and with the accumulating of these indium ions in the basal-plane,two types of inversion domain walls or boundaries have been introduced in the ZnO nanobelts.
We have recently reported the synthesis of one-dimensional nanobelt structures of ZnO, SnO2, In2O3, CdO, Ga2O3, and PbO2 by evaporating the desired commercial metal oxide powders at high temperatures (Science (2001), 291, 1947). The as-synthesized oxide nanobelts are pure, structurally uniform, single crystalline, and most of them free from dislocations. The beltlike morphology appears to be a unique and common structural characteristic for the family of semiconducting oxides. In the present article, we focus on the twin and stacking fault planar defects found in oxide nanobelts and nanowires although they are rarely observed. Some interesting and unique growth morphologies are presented to illustrate the roles played by surface energy and kinetics in growth. It is shown that the surfaces of the oxide nanobelts are enclosed by the low-index, low-energy crystallographic facets. The growth morphology is largely dominated by the growth kinetics.